MOSFET degradation dependence on input signal power in a RF power amplifier
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منابع مشابه
MOSFET degradation dependence on input signal power in a RF power amplifier
Aging produced by both DC and RF stress is experimentally analyzed on a RF CMOS power amplifier. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC and RF (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of th...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2017
ISSN: 0167-9317
DOI: 10.1016/j.mee.2017.05.021